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RHRP3060 Rev. C
RHRP3060 — Hyperfast Diode
?2005 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
Electrical Characteristics
TC
= 25°C unless otherwise noted
Symbol
Test Conditions
RHRP3060
Unit
Min.
Typ.
Max.
VF
IF
= 30 A
-
-
2.1
V
IF
= 30 A, T
C
= 150
?C
-
-
1.7
V
IR
VR
= 400 V
-
-
-
?A
VR
= 600 V
-
-
250
?A
VR
= 400 V, T
C
= 150
?C
-
-
-
mA
VR
= 600 V, T
C
= 150
?C
-
-
1.0
mA
trr
IF
= 1 A, dl
F/dt = 200 A/?s
-
-
40
ns
IF
= 30 A, dl
F/dt = 200 A/?s
-
-
45
ns
ta
IF
= 30 A, dl
F/dt = 200 A/?s
-
22
-
ns
tb
IF
= 30 A, dl
F/dt = 200 A/?s
-
18
-
ns
QRR
IF
= 30 A, dl
F/dt = 200 A/?s
-
100
-
nC
CJ
VR
= 600 V, I
F
= 0 A
-
85
-
pF
R?JC
-
-
1.2
?C/W
DEFINITIONS
VF
= Instantaneous forward voltage (pw = 300
?s, D = 2%)
IR
= Instantaneous reverse current.
trr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b.
ta
= Time to reach peak reverse current (See Figure 9).
tb
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
QRR
= Reverse recovery charge.
CJ
= Junction Capacitance.
R?JC
= Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
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